bc847bvn document number: ds30627 rev. 6 - 2 1 of 6 www.diodes.com may 2013 ? diodes incorporated bc847bvn complementary pair small sig nal surface mount transistor features ? epitaxial die construction ? two internally isolated npn/ pnp transistors in one package ? ultra-small surface mount package ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. "green" device (note 3) ? qualified to aec-q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: sot563 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin finish. solderable per mil-std- 202, method 208 ? weight: 0.003 grams (approximate) ordering information (note 4 & 5) part number compliance marking reel size (inches) tape width (mm) quantity per reel BC847BVN-7 aec-q101 kaw 7 8 3000 bc847bvnq-7 automotive kaw 7 8 3000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap c apable. automotive, aec-q101 and standard products are electrical ly and thermally the same, except where specified. for more information, please refer to http://www.diodes.c om/quality/product_compliance_defin itions/. 5. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information date code key year 2010 2011 2012 2013 2014 2015 2016 2017 code x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view bottom view device schematic top view c 1 q 1 q 2 b 2 e 2 c 2 e 1 b 1 kaw = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) kaw ym sot563 e3
bc847bvn document number: ds30627 rev. 6 - 2 2 of 6 www.diodes.com may 2013 ? diodes incorporated bc847bvn maximum ratings: npn, bc847b type (q 1 ) (@t a = +25c unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 6 v collector current i c 100 ma peak collector current i cm 200 ma peak emitter current i em 200 ma maximum ratings: pnp, bc857b type (q 2 ) (@t a = +25c unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -6 v collector current i c -100 ma peak collector current i cm -200 ma peak emitter current i em -200 ma thermal characteristics ? total device (@t a = +25c unless otherwise specified.) characteristic symbol value unit power dissipation (note 6) total device p d 150 mw thermal resistance, junction to ambient (note 6) r ? thermal characteristics ? total device -50 050100150 200 150 50 100 0 t , ambient temperature ( c) figure 1. power dissipation vs. ambient temperature total device a p , p o we r dissi p a t i o n (mw) d r = 833 c/w ? ja ?
bc847bvn document number: ds30627 rev. 6 - 2 3 of 6 www.diodes.com may 2013 ? diodes incorporated bc847bvn electrical characteristics: npn, bc847b type (q 1 ) (@t a = +25c unless otherwise specified.) characteristic (note 7) symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 ? ? v i c = 100a, i b = 0 collector-emitter breakdown voltage bv ceo 45 ? ? v i c = 10ma, i b = 0 emitter-base breakdown voltage bv ebo 6 ? ? v i e = 100a, i c = 0 dc current gain h fe 200 290 450 ? v ce = 5.0v, i c = 2.0ma collector-emitter saturation voltage v ce(sat) ? 90 200 250 600 mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter saturation voltage v be(sat) ? 700 900 ? mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter voltage v be(on) 580 ? 660 ? 700 720 mv v ce = 5.0v, i c = 2.0ma v ce = 5.0v, i c = 10ma collector-cutoff current i cbo ? ? ? ? 15 5.0 na a v cb = 30v v cb = 30v, t a = +150c gain bandwidth product f t 100 300 ? mhz v ce = 5.0v, i c = 10ma, f = 100mhz collector-base capacitance c cbo ? 3.5 6.0 pf v cb = 10v, f = 1.0mhz note: 7. short duration pulse test used to minimize self-heating effect. 1 10 100 1,000 1.0 10 100 0.1 0.01 h d c c u r r e n t g ai n fe, i , collector current (ma) figure 2. typical dc current gain vs. collector current (bc847b type) c 0 0.1 0.2 0.3 0.4 0.5 0.1 1.0 10 100 v, c o lle c t o r -emi t t e r saturation voltage (v) ce i , collector current (ma) figure 3. typical collector-emitter saturation voltage vs. collector current (bc847b type) c i i = 20 c b t = 100c a t = 25c a t = -50c a 6 10 capacitance (pf) v , reverse voltage (v) figure 4. typical capacitance characteristics (bc847b type) r c obo c ibo f = 1mhz 10 100 1,000 0.1 1.0 10 100 f, g ain-bandwid t h p r o d u c t (m h z) t i , collector current (ma) figure 5. typical gain-bandwidth product vs. collector current (bc847b type) c t = 25c a v = 10v ce v = ce 5v v = ce 2v
bc847bvn document number: ds30627 rev. 6 - 2 4 of 6 www.diodes.com may 2013 ? diodes incorporated bc847bvn electrical characteristics: pnp, bc857b type (q 2 ) (@t a = +25c unless otherwise specified.) characteristic (note 8) symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 ? ? v i c = -100a, i b = 0 collector-emitter breakdown voltage bv ceo -45 ? ? v i c = -10ma, i b = 0 emitter-base breakdown voltage bv ebo -6 ? ? v i e = -100a, i c = 0 dc current gain h fe 220 290 475 ? v ce = -5.0v, i c = -2.0ma collector-emitter saturation voltage v ce(sat) ? -75 -250 -300 -650 mv i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5.0ma base-emitter saturation voltage v be(sat) ? -700 -850 ? -950 mv i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5.0ma base-emitter voltage v be(on) -600 ? -650 ? -750 -820 mv v ce = -5.0v, i c = -2.0ma v ce = -5.0v, i c = -10ma collector-cutoff current i cbo ? ? ? ? -15 -4.0 na a v cb = -30v v cb = -30v, t a = +150c gain bandwidth product f t 100 200 ? mhz v ce = -5.0v, i c = -10ma, f = 100mhz collector-base capacitance c cbo ? 3 4.5 pf v cb = -10v, f = 1.0mhz note: 8. short duration pulse test used to minimize self-heating effect. -1 -10 -100 -1,000 -1 -10 -100 -1,000 h , dc current gain fe i , collector current (ma) figure 6. typical dc current gain vs. collector current (bc857b type) c -1 -0.1 -10 -100 -1,000 v, c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) figure 7. typical collector-emitter saturation voltage vs. collector current (bc857b type) c t = 25c a t = -50c a t = 150c a 0 -0.1 -0.2 -0.3 -0.4 -0.5 i c i b = 10 6 10 cibo cobo c a p a c i t a n c e (p f ) v , reverse voltage (v) figure 8. typical capacitance characteristics (bc857b type) r f = 1mhz -10 -100 -1,000 -1 -10 -100 f, g ain-bandwid t h p r o d u c t (m h z) t i , collector current (ma) figure 9. typical gain-bandwidth product vs. collector current (bc857b type) c
bc847bvn document number: ds30627 rev. 6 - 2 5 of 6 www.diodes.com may 2013 ? diodes incorporated bc847bvn package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
bc847bvn document number: ds30627 rev. 6 - 2 6 of 6 www.diodes.com may 2013 ? diodes incorporated bc847bvn important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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